features ?advanced trench process technology ?high density cell design for ultra low on-resistance ?specially designed for low voltage dc/dc converters ?fast switching for high efficiency maximum ratings and thermal characteristics (t a = 25? unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 continuous drain current t a = 25? i d 10 t j = 150? (1) t a = 70? 8 a pulsed drain current i dm 50 continuous source current (diode conduction) (1) i s 2.3 maximum power dissipation t a = 25? p d 2.5 w t a = 70? 1.6 operating junction and storage temperature range t j , t stg ?5 to 150 ? maximum junction-to-ambient thermal resistance (1) r ja 50 ?/w notes: (1) surface mounted on fr4 board, t 10 sec. mechanical data case: so-8 molded plastic body terminals: leads solderable per mil-std-750, method 2026 high temperature soldering guaranteed: 250?/10 seconds at terminals mounting position: any weight: 0.5g GF4410 n-channel enhancement-mode mosfet v ds 30v r ds(on) 13.5 m ? i d 10a 7/10/01 5 1 4 0.244 (6.20) 0.228 (5.79) 8 0.157 (3.99) 0.150 (3.81) 0.020 (0.51) 0.013 (0.33) 0.050 (1.27) 0.009 (0.23) 0.004 (0.10) 0.197 (5.00) 0.189 (4.80) 0.069 (1.75) 0.053 (1.35) 0.019 (0.48) 0.010 (0.25) x 45 0 8 0.050(1.27) 0.016 (0.41) 0.009 (0.23) 0.007 (0.18) dimensions in inches and (millimeters) so-8 t rench g en f et 0.245 (6.22) min. 0.035 (0.889) 0.025 (0.635) 0.050 typ. (1.27) 0.165 (4.19) 0.155 (3.94) 0.05 (1.27) 0.04 (1.02) mounting pad layout
electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 v gate-body leakage i gss v ds = 0v, v gs = 20v 100 na zero gate voltage drain current i dss v ds = 30v, v gs = 0v 1 a v ds =30v, v gs =0v, t j =55 c 25 on-state drain current (1) i d(on) v ds 5v, v gs = 10v 20 a drain-source on-state resistance (1) r ds(on) v gs = 10v, i d = 10a 8 13.5 m ? v gs = 4.5v, i d = 5a 12 20 forward transconductance (1) g fs v ds = 15v, i d = 10a 38 s dynamic total gate charge q g v ds = 15v, i d = 10a, v gs = 5v 23 32 42 60 nc gate-source charge q gs v ds = 15v, v gs = 10v 5 gate-drain charge q gd i d = 10a 8 turn-on delay time t d(on) 915 rise time t r v dd = 25v, r l = 25 ? 12 20 turn-off delay time t d(off) i d 1a, v gen = 10v 70 100 ns fall time t f r g = 6 ? 35 80 input capacitance c iss v gs = 0v 2100 output capacitance c oss v ds = 25v 320 pf reverse transfer capacitance c rss f = 1.0mh z 190 source-drain diode diode forward voltage (1) v sd i s = 2.3a, v gs = 0v 0.75 1.1 v source-drain reverse recovery time t rr i f = 2.3a, di/dt = 100a/ s 55 80 ns note: (1) pulse test; pulse width 300 s, duty cycle 2% GF4410 n-channel enhancement-mode mosfet g d s v in v dd v gen r g r d v out dut input, v in t d(on) output, v out t on t r t d(off) t off t f inverted 90% 10% 10% 90 % 50% 50% 10% 90% pulse width switching test circuit switching waveforms
0 10 20 30 50 0 0.5 1 1.5 2 3 2.5 fig. 1 ?output characteristics i d -- drain source current (a) v ds -- drain-to-source voltage (v) 0 0.004 0.008 0.012 0.016 0.02 01020304050 fig. 4 ?on-resistance vs. drain current r ds(on) -- on-resistance ( ? ) i d -- drain current (a) 0 10 20 40 30 50 12345 fig. 2 ?transfer characteristics i d -- drain current (a) 40 2.5v 0.6 1.2 1.4 1.6 0.8 1 -- 50 -- 25 25 50 75 100 125 150 0 r ds(on) -- on-resistance (normalized) t j -- junction temperature ( c) fig. 5 ?on-resistance vs. junction temperature v gs = 10v i d = 10a 6.0 v v gs = 10v t j = 125 c --55 c 3.0v 4.0v 4.5v 3.5v 5.0 v 25 c v ds = 10v v gs = 4.5v v gs -- gate-to-source voltage (v) 0.8 0.6 1 1.2 1.4 1.6 1.8 -- 50 -- 25 25 50 75 100 125 150 0 v gs(th) -- threshold voltage (v) t j -- junction temperature ( c) fig. 3 ?threshold voltage vs. temperature i d = 250 a v gs =10v ratings and characteristic curves (t a = 25 c unless otherwise noted) GF4410 n-channel enhancement-mode mosfet
0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 i s -- source current (a) v sd -- source-to-drain voltage (v) t j = 125 c --55 c 25 c v gs = 0v fig. 9 source-drain diode forward voltage 0 2 4 6 8 10 01020304045 q g -- gate charge (nc) fig. 7 gate charge v gs -- gate-to-source voltage (v) v ds = 15v i d = 10a 0 500 1000 1500 2000 2500 3000 0 5 10 15 30 20 25 c -- capacitance (pf) v ds -- drain-to-source voltage (v) c iss c oss c rss fig. 8 capacitance f = 1mhz v gs = 0v 0 0.005 0.01 0.02 0.03 0.015 0.025 0.035 246810 fig. 6 on-resistance vs. gate-to-source voltage r ds(on) -- on-resistance ( ? ) v gs -- gate-to-source voltage (v) i d = 10a t j = 125 c 25 c ratings and characteristic curves (t a = 25 c unless otherwise noted) GF4410 n-channel enhancement-mode mosfet
ratings and characteristic curves (t a = 25 c unless otherwise noted) GF4410 n-channel enhancement-mode mosfet 37 38 40 41 42 43 39 -- 50 -- 25 0 25 50 75 100 120 150 fig. 10 breakdown voltage vs. junction temperature fig. 11 transient thermal impedance bv dss -- breakdown voltafge (v) t j -- junction temperature ( c) i d = 250 a fig. 13 maximum safe operating area i d -- drain current (a) v ds -- drain-source voltage (v) 0.01 0.1 0.1 1 1 10 100 10 100 fig. 12 power vs. pulse duration v gs = 10v single pulse on 1-in 2 2oz cu. t a = 25 c r ds(on) limit 100 s 1ms 10ms 100ms 1s dc 10s 0.1 0.01 0 10 20 30 40 50 60 70 1 10 100
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